Thin film transistors by solution-based indium gallium zinc oxide/carbon nanotubes blend

• Published in: Thin solid films 2009-05, Vol.517 (14), p.4011-4014
• Main Authors: Lee, Keun Woo, Heo, Kon Yi, Oh, Sang Hoon, Moujoud, Abderrafia, Kim, Gun Hee, Kim, Hyun Jae
• Format: Article
• Language: English
• Subjects: Applied sciences; Carrier transport rod; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Growth from solutions; IGZO/SWNTs blend; Materials science; Methods of crystal growth; physics of crystal growth; Nanoscale materials and structures: fabrication and characterization; Nanotubes; Other topics in nanoscale materials and structures; Physics; Semiconducting II–III materials; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Single-walled carbon nanotubes (SWNTs); Solution-based thin film transistors; Transistors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.01.145

Solution-based indium gallium zinc oxide (IGZO)/single-walled carbon nanotubes (SWNTs) blend have been used to fabricate the channel of thin film transistors (TFTs). The electrical characteristics of the fabricated devices were examined. We found a low leakage current and a higher on/off currents ratio for TFT with SWNTs compared to solution-based TFTs made without SWNTs. The saturation field effect mobility ( μ sat) of about 0.22 cm 2/Vs, the current on/off ratio is ~ 10 5, the subthreshod swing is ~ 2.58 V/decade and the threshold voltage ( V th) is less than − 2.3 V. We demonstrated that the solution-based blend active layer provides the possibility of producing higher performance TFTs for low-cost large area electronic and flexible devices.