Anomalous Hall effect and electron transport in ferromagnetic MnBi films

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coe...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2011-10, Vol.23 (42), p.426001-np
Main Authors: Kharel, P, Sellmyer, D J
Format: Article
Language:English
Subjects:
Condensed matter
Electrical resistivity
Electron transport
Ferromagnetic materials
Hall effect
Magnetic anisotropy
Thin films
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Summary:The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R(0)) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R(s)) exhibits a strong ρ(2) dependence, where ρ is the longitudinal resistivity.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/23/42/426001