Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices

One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, fo...

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Bibliographic Details
Published in:ACS nano 2011-11, Vol.5 (11), p.9202-9207
Main Authors: Chen, Sheng-Yu, Yeh, Ping-Hung, Wu, Wen-Wei, Chen, Uei-Shin, Chueh, Yu-Lun, Yang, Yu-Chen, Gwo, Shangir, Chen, Lih-Juann
Format: Article
Language:English
Subjects:
Contact
Devices
Electrical resistivity
Interconnections
Metal silicides
Nanostructure
Nanowires
Origins
Stability
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Summary:One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi2, which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects.
ISSN:1936-0851
1936-086X
DOI:10.1021/nn203445p