Frequency characteristics of diodes with intervalley electron transfer that are based on variband In sub( x(z))Ga sub(1 - x(z))As with various cathode contacts

A two-level model of intervalley electron transfer in a variband semiconductor is used to study the operation of a Gunn diode based on variband In sub( x(z))Ga sub(1 - x(z))As with n super(+)-n cathodes and n super(+)-n super(-)-n cathodes for different lengths of the active region and different thi...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2007-10, Vol.52 (10), p.1158-1164
Main Author: Storozhenko, I P
Format: Article
Language:English
Subjects:
Cathodes
Critical frequencies
Diodes
Electron transfer
Electronics
Gallium arsenide
Gallium arsenides
Semiconductors
Online Access:Get full text
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Summary:A two-level model of intervalley electron transfer in a variband semiconductor is used to study the operation of a Gunn diode based on variband In sub( x(z))Ga sub(1 - x(z))As with n super(+)-n cathodes and n super(+)-n super(-)-n cathodes for different lengths of the active region and different thicknesses of the variband layer. It is demonstrated that the critical frequency of a GaAs-In sub(0.4)Ga sub(0.6)As diode (280-290 GHz) is higher than the critical generation frequencies of GaAs, In sub(0.4)Ga sub(0.6)As, and In sub(0.2)Ga sub(0.8)As diodes.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226907100130