Checking the electron equilibrium in the semiconductor and at the oxide/semiconductor boundary of a silicon metal/oxide/semiconductor structure with mobile ions in the oxide film

The differential capacitance of a silicon metal/oxide/semiconductor (MOS) structure with mobile ions in the oxide film is measured as a function of temperature and the applied voltage in the frequency range 1-100 kHz. The time relaxation of capacitance after interruption of the voltage sweep is cons...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2006-06, Vol.51 (6), p.719-724
Main Authors: Dmitriev, S. G., Markin, Yu. V., Sizov, V. E.
Format: Article
Language:English
Subjects:
Capacitance
Electric potential
Frequency ranges
Oxide coatings
Oxides
Semiconductors
Silicon
Studies
Voltage
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Summary:The differential capacitance of a silicon metal/oxide/semiconductor (MOS) structure with mobile ions in the oxide film is measured as a function of temperature and the applied voltage in the frequency range 1-100 kHz. The time relaxation of capacitance after interruption of the voltage sweep is considered. It is found that, in a certain temperature-dependent frequency range, no frequency dispersion of the structure capacitance is observed; i.e., the capacitance is quasi-equilibrium with respect to charges located in the bulk and in the fast surface states of the semiconductor and depends only on its surface potential. In this interval, mobile ions and other "slow" charges in the oxide film cannot keep pace with the varying voltage and make zero contribution to the capacitance. It is shown that, when the voltage is ramped at a rate of 10 mV/s at a temperature of about 200°C, the reaction of charges in the film noticeably lags behind the voltage change.[PUBLICATION ABSTRACT]
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226906060167