Reflection of electrons during tunneling and an intersubband polaron in the 2D electron system of a delta-layer in GaAs

Al-δ-GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the threshold of the emission of an LO-phonon is observed. This phenomenon occurs when a new subband is involved in the tunne...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2006-05, Vol.51 (5), p.588-595
Main Authors: Dizhur, S. E., Kotel’nikov, I. N., Dizhur, E. M.
Format: Article
Language:English
Subjects:
Aluminum
Atoms & subatomic particles
Electronics
Electrons
Emission
Gallium arsenide
Polarons
Reflection
Semiconductors
Studies
Tunneling
Two dimensional
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Summary:Al-δ-GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the threshold of the emission of an LO-phonon is observed. This phenomenon occurs when a new subband is involved in the tunneling process and when intersubband transitions of the electrons in a 2D-system with the emission of an LO-phonon are added to the inelastic tunneling within a single subband. It is shown that, under the conditions of an intersubband polaron resonance, the reflection processes dominate during tunneling into the delta-layer. If, however, tunneling from the delta-layer occurs, the reflection processes are observed when two subbands are occupied.[PUBLICATION ABSTRACT]
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226906050123