Synthesis of nanostructured multiphase (Ti,Al)N/a-Si3N4 thin films using dense plasma focus device

A 2.3kJ pulsed plasma focus device was used to prepare thin films of nc-(Ti,Al)N/a-Si3N4 at room temperature. The plasma focus device, fitted with copper anode encapsulated with Ti0.5Al0.5 anode, was operated with nitrogen as the filling gas. Films were deposited with various number of focus shots,...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2011-09, Vol.269 (18), p.1951-1955
Main Authors: Hussain, Tousif, Ahmad, R., Khalid, Nida, Umar, Z.A., Hussnain, A.
Format: Article
Language:English
Subjects:
Anodes
Deposition
Devices
Nanostructure
Plasma focus
Roughness
Shot
Thin films
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Summary:A 2.3kJ pulsed plasma focus device was used to prepare thin films of nc-(Ti,Al)N/a-Si3N4 at room temperature. The plasma focus device, fitted with copper anode encapsulated with Ti0.5Al0.5 anode, was operated with nitrogen as the filling gas. Films were deposited with various number of focus shots, at 90mm from top of the anode and at zero angular position with respect to anode axis. XRD patterns show the growth of polycrystalline (Ti,Al)N thin films with orientations in the (111), (200), (220) and (311) crystallographic planes. Behavior of lattice constant, grain size and film roughness of deposited film as a function of variation in number of focus shots is discussed. SEM micrographs of film deposited with 15 number of focus shots exhibit well-developed net like structure of nc-(Ti,Al)N/a-Si3N4 and possibly nc-(Ti,Al)N/a-Si3N4/a-AlN or nc-TiN/a-Si3N4/a-AlN. Surface Roughness ranging 64nm to 89nm was also observed.
ISSN:0168-583X
DOI:10.1016/j.nimb.2011.05.023