Implementation of Molecular Transistor Electrodes by Electromigration

Gaps with a size of less than 5 nm have been fabricated in 15-nm-thick and 200-nm-wide gold strips deposited on sapphire substrates. Preparation conditions providing a sufficient adhesion of such electrodes as well as the parameters for the electromigration process used to fabricate the gaps have be...

Full description

Saved in:
Bibliographic Details
Published in:Journal of superconductivity and novel magnetism 2011-01, Vol.24 (1-2), p.1087-1093
Main Authors: Stepanov, A. S., Soldatov, E. S., Snigirev, O. V.
Format: Article
Language:English
Subjects:
Adhesion
Characterization and Evaluation of Materials
Condensed Matter Physics
Electrodes
Electromigration
Gaps
Gold
Magnetic Materials
Magnetism
Original Paper
Physics
Physics and Astronomy
Single-electron transistors
Strip
Strongly Correlated Systems
Superconductivity
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Gaps with a size of less than 5 nm have been fabricated in 15-nm-thick and 200-nm-wide gold strips deposited on sapphire substrates. Preparation conditions providing a sufficient adhesion of such electrodes as well as the parameters for the electromigration process used to fabricate the gaps have been found which allow a successful gap implementation. Such gaps transform gold strips to the source-drain electrodes of planar single electron transistors based on nanoparticles or molecules.
ISSN:1557-1939
1557-1947
DOI:10.1007/s10948-010-0857-y