Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition

K0.5Na0.5NbO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition method with different annealing temperatures of 550 degree C, 600 degree C, 700 degree C. The post-annealing treatment was introduced at 550 degree C for 3min in oxygen ambient. It is found that the fi...

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Bibliographic Details
Published in:Thin solid films 2011-05, Vol.519 (15), p.5070-5073
Main Authors: LI, N, LI, W. L, ZHANG, S. Q, FEI, W. D
Format: Article
Language:English
Subjects:
Annealing
Cross-disciplinary physics: materials science
rheology
Crystallization
Deposition
Dielectric properties
Exact sciences and technology
Growth from solutions
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Silicon dioxide
Silicon substrates
Thin films
Titanium
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Summary:K0.5Na0.5NbO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition method with different annealing temperatures of 550 degree C, 600 degree C, 700 degree C. The post-annealing treatment was introduced at 550 degree C for 3min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.01.130