Electrical properties of 1.5-nm SiON gate-dielectric using radical oxygen and radical nitrogen

We have developed a low-leakage and highly reliable 1.5-nm SiON gate-dielectric by using radical oxygen and nitrogen. In this development, we introduce a new method for determining an ultrathin SiON gate-dielectric thickness based on the threshold voltage dependence on the substrate bias in MOSFETs....

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2002-11, Vol.49 (11), p.1903-1909
Main Authors: Togo, M., Watanabe, K., Yamamoto, T., Ikarashi, N., Tatsumi, T., Ono, H., Mogami, T.
Format: Article
Language:English
Subjects:
Current
Devices
Dielectric films
Equivalence
Leakage current
MOSFETs
Oxidation
Oxides
Radicals
Semiconductor device reliability
Silicon dioxide
Silicon materials/devices
Silicon oxynitride
Surfaces
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have developed a low-leakage and highly reliable 1.5-nm SiON gate-dielectric by using radical oxygen and nitrogen. In this development, we introduce a new method for determining an ultrathin SiON gate-dielectric thickness based on the threshold voltage dependence on the substrate bias in MOSFETs. It was found that oxidation using radical oxygen followed by nitridation using radical nitrogen provides the 1.5-nm (oxide equivalent thickness) SiON, in which leakage current is two orders of magnitude less than that of 1.5-nm SiO/sub 2/ without degrading device performance in NMOSFETs. The 1.5-nm (oxide equivalent thickness) SiON was also found to be ten times more reliable than 1.5-nm SiO/sub 2/.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.804695