Highly selective diamond and β-SiC crystal formation at increased atomic hydrogen concentration: A route for synthesis of high-quality and patterned hybrid diamond/β-SiC composite film

Utilizing a high atomic hydrogen concentration, highly selective formation of micrometer-sized diamond and β-SiC crystals is achieved in a microwave plasma chemical vapour deposition process. The high atomic hydrogen concentration, generated by a high microwave power density, hinders secondary heter...

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Bibliographic Details
Published in:Scripta materialia 2011-09, Vol.65 (6), p.548-551
Main Authors: Zhuang, Hao, Zhang, Lei, Staedler, Thorsten, Jiang, Xin
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Chemical vapour deposition
Composite films
Crystals
Density
Deposition
Diamond
Growth mechanism
Microwaves
Nucleation
Nuclei
Synthesis
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Summary:Utilizing a high atomic hydrogen concentration, highly selective formation of micrometer-sized diamond and β-SiC crystals is achieved in a microwave plasma chemical vapour deposition process. The high atomic hydrogen concentration, generated by a high microwave power density, hinders secondary heterogeneous nucleation and therefore enhances the selectivity of CH 3 and SiH 3 deposition onto diamond and β-SiC crystals, respectively. Based on experimental observation, an H-induced selective growth model is proposed that explains the mechanisms.
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2011.06.023