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Stress and strain in DLC films induced by electron bombardment
Radiation induced stress and strain have been investigated in amorphous hydrogenated DLC films after their exposure to high-energy (12 MeV) electrons, produced in the medical linear accelerator. DLC structures of different hydrogen contents and thickness, deposited from acetylene gas onto Si wafers...
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Published in: | Vacuum 2009-05, Vol.83, p.S159-S161 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Radiation induced stress and strain have been investigated in amorphous hydrogenated DLC films after their exposure to high-energy (12
MeV) electrons, produced in the medical linear accelerator. DLC structures of different hydrogen contents and thickness, deposited from acetylene gas onto Si wafers in the two-chamber plasmotron system were used in this investigation.
Optically levered laser technique was used to measure the radius of curvature of the investigated DLC films and residual stress in the film was determined. Surface morphology of DLC films was defined by AFM “Nanotop-206”. Microhardness measurements were performed using MTS Nanoindenter G200. Bonding structure of the DLC films was analysed using the Raman scattering spectroscopy.
It was found that the bombardment of DLC films with high-energy electrons introduced additional residual stress in all investigated samples. However, stress saturation tendency was observed after some fractions of the irradiation. Radiation induced stress was lower in the samples with well-organized networking structure, depending on technological conditions of the film growth. Significant deterioration of the mechanical properties of DLC films after their bombardment with high-energy electrons was not observed. Radiation induced changes in irradiated DLC films are discussed on the basis of the results of measurements. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/j.vacuum.2009.01.052 |