Impact of SF sub(6 plasma treatment on performance of AlGaN/GaN HEMT)

Selective plasma treatment of an AlGaN/GaN heterostructure in the RF discharge of the electronegative SF sub(6 gas was studied. Shallow recess-gate etching of AlGaN ([not, vert, similar]5 nm) was performed in CCl) sub(4) plasma through a photoresist mask. Subsequently, recess-gate etching followed i...

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Bibliographic Details
Published in:Vacuum 2009-08, Vol.84 (1), p.235-237
Main Authors: Vanko, G, Lalinsky, T, Hascik, S, Ryger, I, Mozolova, Z, Skriniarova, J, Tomaska, M, Kostic, I, Vincze, A
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Channels
Etching
Gallium nitrides
Heterostructures
High electron mobility transistors
Radio frequencies
Semiconductor devices
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Summary:Selective plasma treatment of an AlGaN/GaN heterostructure in the RF discharge of the electronegative SF sub(6 gas was studied. Shallow recess-gate etching of AlGaN ([not, vert, similar]5 nm) was performed in CCl) sub(4) plasma through a photoresist mask. Subsequently, recess-gate etching followed in situ by SF sub(6 plasma. The plasma treatment provides the following advantages in the technology of AlGaN/GaN high-electron mobility transistors (HEMT): It (1) simplifies their technology; (2) ensures sufficient selectivity; and (3) enables the technologist to set the threshold voltage of the HEMTs controllably. At the same time, the treatment can (1) provide the AlGaN/GaN heterostructure with surface passivation; (2) modify the 2DEG in any area of a HEMT channel; and (3) make it possible to convert a HEMT operation from depletion mode to enhancement mode. The treatment also improved significantly the DC and RF parameters of HEMTs studied.)
ISSN:0042-207X
DOI:10.1016/j.vacuum.2009.04.032