One transistor ferroelectric memory with Pt/Pb sub(5)Ge sub(3)O sub(11 )/Ir/Poly-Si/SiO sub(2)/Si gate stack

One transistor ferroelectric nonvolatile memory with gate stack of Pt /Pb sub(5 )Ge sub(3)O sub(11)/Ir/Poly-Si/SiO sub(2)/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from CV and IV measurements. The memory window d...

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Bibliographic Details
Published in:IEEE electron device letters 2002-06, Vol.23 (6), p.339-341
Main Authors: Li, Tingkai, Hsu, Sheng Teng, Ulrich, Bruce D, Stecker, Lisa, Evans, David R, Lee, Jong J
Format: Article
Language:English
Subjects:
Devices
Electric potential
Ferroelectric materials
Ferroelectricity
Programming
Semiconductor devices
Silicon
Voltage
Online Access:Get full text
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Summary:One transistor ferroelectric nonvolatile memory with gate stack of Pt /Pb sub(5 )Ge sub(3)O sub(11)/Ir/Poly-Si/SiO sub(2)/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from CV and IV measurements. The memory window decays rapidly within 10 seconds after programming, but remains stable at 1 V for up to 100 h. The "on" and "off" state currents are greater than 10 mu A/ mu m and less 0.01 pA/ mu m, respectively, at a drain voltage of 0.1 V.
ISSN:0741-3106
DOI:10.1109/LED.2002.1004228