A thermal activation view of low voltage impact ionization in MOSFETs

The authors present a thermal activation perspective for direct assessment of the low voltage impact ionization in deep-submicrometer MOSFETs. A comparison of the experimentally determined activation energy and a simple theoretical model is used to demonstrate the underlying mechanism responsible fo...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2002-09, Vol.23 (9), p.550-552
Main Authors: Pin Su, Goto, K., Sugii, T., Chenming Hu
Format: Article
Language:English
Subjects:
Activation
Bias
Current measurement
Drains
Driving
Hot carrier effects
Impact ionization
Ionization
Lattices
Low voltage
Mathematical models
MOSFETs
Photonic band gap
Predictive models
Temperature measurement
Thermal force
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors present a thermal activation perspective for direct assessment of the low voltage impact ionization in deep-submicrometer MOSFETs. A comparison of the experimentally determined activation energy and a simple theoretical model is used to demonstrate the underlying mechanism responsible for impact ionization at low drain bias. The study indicates that the main driving force of impact ionization changes from the electric field to the lattice temperature with power-supply scaling below 1.2 V. This transition of driving force results in a linear relationship between log(I/sub SUB//I/sub D/) and V/sub D/ at sub-bandgap drain bias, as predicted by the proposed thermally-assisted impact ionization model.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.802653