Modelling of low-energy-implanted phosphorus diffusion during rapid thermal processing of the semiconductor structures

A model of diffusion of dopant atoms implanted in silicon is presented. The model is based on the creation and migration of dopant-vacancy and dopant-self-interstitial complexes, it accounts for process nonlinearity and influence of non-uniform defects distribution as well as electric field and elas...

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Bibliographic Details
Published in:Vacuum 2009-05, Vol.83, p.S127-S130
Main Authors: Mironov, A.M., Komarov, F.F., Komarov, A.F., Tsurko, V.A., Zayats, G.M., Velichko, O.I.
Format: Article
Language:English
Subjects:
Computer simulation
Diffusion
Electric fields
Ion implantation
Migration
Phosphorus
Point defects
Rapid thermal annealing
Secondary ion mass spectrometry
Semiconductors
Silicon
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Summary:A model of diffusion of dopant atoms implanted in silicon is presented. The model is based on the creation and migration of dopant-vacancy and dopant-self-interstitial complexes, it accounts for process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The simulation results are compared with SIMS investigations of rapid thermal annealing of phosphorus implanted in silicon. The calculated distribution agrees well with experimental data and displays anomalous diffusion phenomena specific for phosphorus (kink-and-tail).
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2009.01.043