High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high ba...

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Bibliographic Details
Published in:IEEE electron device letters 2002-08, Vol.23 (8), p.461-463
Main Authors: Vellas, N., Gaquiere, C., Guhel, Y., Werquin, M., Bue, F., Aubry, R., Delage, S., Semond, F., De Jaeger, J.C.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Devices
Gallium arsenide
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
III-V semiconductor materials
Linearity
Microwave devices
Noise levels
Silicon carbide
Silicon substrates
Thermal conductivity
Voltage
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Summary:In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high bandgap GaN devices are ideal candidates for the applications requiring high power and linearity simultaneously.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.801328