Near-Room-Temperature Mid-Infrared Quantum Well Photodetector

We demonstrate InGaAs mid‐infrared quantum well infrared photodetectors (MIR PV‐QWIPs) that enable cost‐effective mature GaAs‐based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polariza...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2011-12, Vol.23 (46), p.5536-5539
Main Authors: Hinds, Sean, Buchanan, Margaret, Dudek, Richard, Haffouz, Sofiane, Laframboise, Sylvain, Wasilewski, Zbigniew, Liu, H. C.
Format: Article
Language:English
Subjects:
Absorption
Aluminum - chemistry
Arsenicals - chemistry
Gallium - chemistry
gas sensing
Indium - chemistry
Infrared Rays
intersubband quantum wells
micro-optoelectronics
photodetector noise
photovoltaic infrared imaging
Quantum Theory
Semiconductors
Temperature
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Summary:We demonstrate InGaAs mid‐infrared quantum well infrared photodetectors (MIR PV‐QWIPs) that enable cost‐effective mature GaAs‐based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and high speed operation at TEC temperatures without bias.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201103372