Graphene Gate Electrode for MOS Structure-Based Electronic Devices

We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical-stress-induced-gate dielectric degradation, resulting in a quantum leap of gate dielectric reliability. The high work function of hole-doped graphene also helps reduce the...

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Bibliographic Details
Published in:Nano letters 2011-12, Vol.11 (12), p.5383-5386
Main Authors: Park, Jong Kyung, Song, Seung Min, Mun, Jeong Hun, Cho, Byung Jin
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Dielectrics
Electrodes
Electronic devices
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals
Electronics
Exact sciences and technology
Flash memory (computers)
Fullerenes and related materials
diamonds, graphite
Gates
Graphene
Materials science
Memory devices
Metal oxide semiconductors
Molecular electronics, nanoelectronics
Physics
Quantum mechanics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Surface double layers, schottky barriers, and work functions
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Summary:We demonstrate that the use of a monolayer graphene as a gate electrode on top of a high-κ gate dielectric eliminates mechanical-stress-induced-gate dielectric degradation, resulting in a quantum leap of gate dielectric reliability. The high work function of hole-doped graphene also helps reduce the quantum mechanical tunneling current from the gate electrode. This concept is applied to nonvolatile Flash memory devices, whose performance is critically affected by the quality of the gate dielectric. Charge-trap flash (CTF) memory with a graphene gate electrode shows superior data retention and program/erase performance that current CTF devices cannot achieve. The findings of this study can lead to new applications of graphene, not only for Flash memory devices but also for other high-performance and mass-producible electronic devices based on MOS structure which is the mainstream of the electronic device industry.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl202983x