Inhibited spontaneous emission of quantum dots observed in a 3D photonic band gap

We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the emission frequency. The decay rates averaged over all dipole o...

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Bibliographic Details
Published in:Physical review letters 2011-11, Vol.107 (19), p.193903-193903, Article 193903
Main Authors: Leistikow, M D, Mosk, A P, Yeganegi, E, Huisman, S R, Lagendijk, A, Vos, W L
Format: Article
Language:English
Subjects:
Optics and Photonics - instrumentation
Photons
Quantum Dots
Silicon Compounds - chemistry
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Summary:We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the emission frequency. The decay rates averaged over all dipole orientations are inhibited by a factor of 10 in the photonic band gap and enhanced up to 2× outside the gap, in agreement with theory. We discuss the effects of spatial inhomogeneity, nonradiative decay, and transition dipole orientations on the observed inhibition in the band gap.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.107.193903