Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays

The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, a...

Full description

Saved in:
Bibliographic Details
Published in:Optics letters 2012-01, Vol.37 (1), p.88-90
Main Authors: Kang, Ji Hye, Kim, Hyung Gu, Chandramohan, S, Kim, Hyun Kyu, Kim, Hee Yun, Ryu, Jae Hyoung, Park, Young Jae, Beak, Yun Seon, Lee, Jeong-Sik, Park, Joong Seo, Lysak, Volodymyr V, Hong, Chang-Hee
Format: Article
Language:English
Subjects:
Arrays
Gallium nitrides
Indium gallium nitrides
Injection current
Light-emitting diodes
Prisms
Reflectors
Refraction
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.37.000088