A novel vertical channel self-aligned split-gate flash memory

A novel vertical channel self-aligned split-gate floating-gate flash memory (VSAS_FG) was proposed and experimentally demonstrated for the first time. The floating-gate of VSAS_FG can be self-aligned realized without additional mask. Moreover, the VSAS_FG has higher scalability since the cell area o...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 2009-02, Vol.53 (2), p.124-126
Main Authors: Wu, Dake, Zhou, Falong, Huang, Ru, Li, Yan, Cai, Yimao, Guo, Ao, Zhang, Xing, Wang, Yangyuan
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Cycles
Design. Technologies. Operation analysis. Testing
Electronics
Endurance
Exact sciences and technology
Feasibility
Flash memory
Flash memory (computers)
Floating-gate
Gates
High-density
Integrated circuits
Integrated circuits by function (including memories and processors)
Low-power
Programming
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Split-gate
Vertical channel
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A novel vertical channel self-aligned split-gate floating-gate flash memory (VSAS_FG) was proposed and experimentally demonstrated for the first time. The floating-gate of VSAS_FG can be self-aligned realized without additional mask. Moreover, the VSAS_FG has higher scalability since the cell area of vertical channel device is independent on gate length. With enhanced electrical fields for programming and erasing, the fabricated VSAS_FG can achieve ∼10 μs programming time and ∼10 ms erasing time. The cycling endurance and the bake retention were also investigated. The experimental results demonstrate the feasibility of the VSAS_FG concept as a promising candidate for low-power, high-density flash memory application.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2008.11.014