Studies on non-thermal atmospheric pressure plasma process conditions for groove formation on silicon nitride for silicon solar cells

Fabrications of narrow electrode grooves for front electrodes on single crystalline silicon solar cells were examined using surface discharges, in which the electrode grooves were formed by etching a silicon nitride (SiN) film on substrates. The surface discharge could effectively etch the SiN film...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2009-06, Vol.12 (3), p.106-112
Main Authors: Hamada, Toshiyuki, Sakoda, Tatsuya, Otsubo, Masahisa
Format: Article
Language:English
Subjects:
Applied sciences
Electrodes
Electronics
Energy
Etching
Exact sciences and technology
Grooves
Natural energy
Optoelectronic devices
Photovoltaic cells
Photovoltaic conversion
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon nitride
Silicon nitride film
Silicon substrates
Single crystalline silicon
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Surface discharge
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Description
Summary:Fabrications of narrow electrode grooves for front electrodes on single crystalline silicon solar cells were examined using surface discharges, in which the electrode grooves were formed by etching a silicon nitride (SiN) film on substrates. The surface discharge could effectively etch the SiN film within 10 s and that a high etching rate more than 1800 nm/min was obtained. An optimum ratio of Ar gas, which was enough to maintain the formation of innumerable surface streamers, was 2.3 times larger than that of etching gas, and a short-term etching with the high discharge voltage was effective to narrow groove width.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2009.08.005