Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models

Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromode...

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Bibliographic Details
Published in:Solid-state electronics 2009-02, Vol.53 (2), p.195-203
Main Authors: Lou, Lifang, Liou, Juin J., Dong, Shurong, Han, Yan
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Compact modeling
Computer aided design
Devices
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Electrostatic discharge (ESD)
Electrostatic discharges
Exact sciences and technology
Mathematical models
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon controlled rectifier (SCR)
Silicon controlled rectifiers
SPICE Gummel–Poon (SGP) model
Testing, measurement, noise and reliability
Transistors
Vertical Bipolar Inter-Company (VBIC) model
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Summary:Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromodel development. In the paper, we use both the Vertical Bipolar Inter-Company (VBIC) and SPICE Gummel–Poon (SGP) models for these bipolar transistors and compare the perspective macromodel results. Measurements obtained from the transmission line pulsing (TLP) tester are also included to assess the suitability and pros and cons of the VBIC and SGP models for the SCR ESD modeling.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2008.11.007