Characterization of X-ray radiation damage in Si/SiO sub(2) structures using second-harmonic generation

• Published in: IEEE transactions on nuclear science 2000-01, Vol.47 (6)
• Main Authors: Marka, Z, Singh, S K, Wang, W, Lee, S C, Kavich, J, Glebov, B, Rashkeev, S N, Karmarkar, AP, Albridge, R C, Pantelides, ST, Schrimpf, R D, Fleetwood, D M, Tolk, N H
• Format: Article
• Language: English
• Subjects: Carrier recombination; Dynamics; Electric fields; Oxides; Radiation damage; Silicon; Silicon dioxide; X-rays
• ISSN: 0018-9499
• DOI: 10.1109/23.903762

We report the first application of second-harmonic generation (SHG) measurements for the characterization of X-ray radiation damage in Si/SiO sub(2) structures. The main advantage of this experimental technique is that it is noninvasive, contactless, and sensitive to the electric field at the interface. Interaction of intense 800 nm femtosecond laser pulses with Si/SiO sub(2) structures results in electron-hole pair creation in the Si, multiphoton carrier injection and second-harmonic generation. The time-dependent second-harmonic (doubled frequency) signal is a measure of the dynamic electric field at the interface. This dynamic field is created and altered by unequal electron-hole injection into the oxide, trapping/detrapping of charges, and carrier recombination processes. We find that the SHG response from Si/SiO sub(2) samples before and after X-ray irradiation is significantly different. Thus, SHG is a promising technique for the characterization of radiation damage in Si/SiO sub(2) structures. In particular, SHG is especially useful in characterizing damage in ultrathin oxide layers, for which conventional electrical measurements may not be sufficiently sensitive to the kinds of defects observable via optical methods