A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process. The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2000-09, Vol.47 (9), p.1767-1769
Main Authors: Sanden, M., Zhang, S.-L., Grahn, J.V., Ostling, M.
Format: Article
Language:English
Subjects:
Accumulators
Bipolar transistors
Collectors
Devices
emitter
Emitters (electron)
Extraction
Junction transistors
modeling
parameter estimation
Semiconductor devices
series resistances
signal equivalent-circuit
Silicon
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Description
Summary:A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process. The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances, and the extrinsic base-collector capacitance.
ISSN:0018-9383
1557-9646
1557-9646
DOI:10.1109/16.861590