Thin-film devices for low power applications

Power consumption and matching are the principal issues at the 32nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present thin-film technologies (FDSOI, LSOI and bulk+) leading to the integration of single gated thin fi...

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Bibliographic Details
Published in:Solid-state electronics 2010-02, Vol.54 (2), p.90-96
Main Authors: Monfray, S., Fenouillet-Beranger, C., Bidal, G., Boeuf, F., Denorme, S., Huguenin, J.L., Samson, M.P., Loubet, N., Hartmann, J.M., Campidelli, Y., Destefanis, V., Arvet, C., Benotmane, K., Clement, L., Faynot, O., Skotnicki, T.
Format: Article
Language:English
Subjects:
Bulk
CMOS
Devices
Electronics
FDSOI
Localized SOI
Low power
Matching
Power consumption
SON
Thin films
Ultra-Thin Body devices
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Summary:Power consumption and matching are the principal issues at the 32nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present thin-film technologies (FDSOI, LSOI and bulk+) leading to the integration of single gated thin films devices for 22nm nodes and below.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2009.12.013