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A 60-MHz 240-mW MPEG-4 videophone LSI with 16-Mb embedded DRAM
A 240-mW single-chip MPEG-4 videophone LSI with a 16-Mb embedded DRAM is fabricated utilizing a 0.25-/spl mu/m CMOS triple-well quad-metal technology. The videophone LSI is applied to the 3GPP 3G-324M video-telephony standard for IMT-2000, and implements the MPEG-4 video SPL1 codec, the AMR speech c...
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Published in: | IEEE journal of solid-state circuits 2000-11, Vol.35 (11), p.1713-1721 |
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Main Authors: | , , , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
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Online Access: | Get full text |
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Summary: | A 240-mW single-chip MPEG-4 videophone LSI with a 16-Mb embedded DRAM is fabricated utilizing a 0.25-/spl mu/m CMOS triple-well quad-metal technology. The videophone LSI is applied to the 3GPP 3G-324M video-telephony standard for IMT-2000, and implements the MPEG-4 video SPL1 codec, the AMR speech codec, and the ITU-T H.223 Annex B multiplexing/demultiplexing at the same time. Three 16-bit multimedia-extended RISC processors, dedicated hardware accelerators, and a 16-Mb embedded DRAM are integrated on a 10.84 mm/spl times/10.84 mm die. It also integrates camera, display, audio, and network interfaces required for a mobile video-phone terminal. In addition to conventional low-power techniques, such as clock gating and parallel operation, some new low-power techniques are also employed. These include an embedded DRAM with optimized configuration, a low-power motion estimator, and the adoption of the variable-threshold voltage CMOS (VT-CMOS). The MPEG-4 videophone LSI consumes 240 mW at 60 MHz, which is only 22% of that for a conventional multichip design. Variable threshold voltage CMOS reduces standby leakage current to 26 /spl mu/A, which is only 17% of that for the conventional CMOS design. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.881219 |