Experimental determination of electron drift velocity in 4H-SiC p super(+)-n-n super(+) avalanche diodes

4H-SiC p super(+)-n-n super(+) diodes of low series resistivity ( < 1x10 super(-4) Omega times cm super(2)) were fabricated and packaged. The diodes exhibited homogeneous avalanche breakdown at voltages U sub(b) identical with 250-270 V according to the doping level of the n layer. The temperatur...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2000-10, Vol.21 (10), p.485-487
Main Authors: Vassilevski, Konstantin V, Zekentes, Konstantinos, Zorenko, Alexander V, Romanov, Leonid P
Format: Article
Language:English
Subjects:
Avalanche diodes
Breakdown
Density
Diodes
Electric potential
Electrical resistivity
Electron drift velocity
Voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:4H-SiC p super(+)-n-n super(+) diodes of low series resistivity ( < 1x10 super(-4) Omega times cm super(2)) were fabricated and packaged. The diodes exhibited homogeneous avalanche breakdown at voltages U sub(b) identical with 250-270 V according to the doping level of the n layer. The temperature coefficient of the breakdown voltage was measured to be 2.6x10 super(-4) K super(-1) in the temperature range 300 to 573 K. These diodes were capable to dissipate a pulsed power density of 3.7 MW /cm super(2) under avalanche current conditions. The transient thermal resistance of the diode was measured to be 0.6 K/W for a 100-ns pulse width. An experimental determination of the electron saturated drift velocity along the c-axis in 4H-SiC was performed for the first time. It was estimated to be 0.8x10 super(7) cm/s at room temperature and 0.75x10 super(7) cm/s at approximately 460 K.
ISSN:0741-3106
DOI:10.1109/55.870609