Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effec...

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Bibliographic Details
Published in:IEEE electron device letters 2001-12, Vol.22 (12), p.571-573
Main Authors: Gundlach, D.J., Li Li Jia, Jackson, T.N.
Format: Article
Language:English
Subjects:
Drains
Electric potential
Electrodes
Flat panel displays
Organic chemicals
Organic semiconductors
Organic thin film transistors
Pentacene
Semiconductor devices
Silicon
Substrates
Temperature
Thin film transistors
Thin films
Voltage
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Summary:We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effect mobility greater than 0.5 cm/sup 2//V-s at a drain-source voltage of -0.1 V, on/off current ratio greater than 10/sup 7/, and subthreshold slope as low as 0.7 V/decade.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.974580