Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

• Published in: Journal of materials science. Materials in electronics 2007-10, Vol.18 (S1), p.57-60
• Main Authors: O'REILLY, L, MITRA, A, LUCAS, F. O, NATARAJAN, Gomathi, MCNALLY, P. J, DANIELS, S, LANKINEN, A, LOWNEY, D, BRADLEY, A. L, CAMERON, D. C
• Format: Article
• Language: English
• Subjects: Applied sciences; Capping; Carrier density; Circuit properties; Conductivity; Copper; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Excitation; Integrated optoelectronics. Optoelectronic circuits; Interfaces; Materials; Materials science; Optical and optoelectronic circuits; Resistivity; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9173-0

The use of co-evaporation of ZnCl sub(2) with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of +/-4 V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n 1 10 super(16) cm super(-3) and Hall mobility mu 29 cm super(2)v super(-1)s super(-1) for a CuCl sample doped with a nominal 3 mole % ZnCl sub(2). By use of an in situ CaF sub(2) capping layer, transmission >90% is achieved. At room temperature a strong Z sub(3) free excitonic emission occurs at 385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.