Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method

Ba 1− x Sr x TiO 3 (BST) thin films doped with La, Cd and Sn were prepared by sol–gel method on the Pt/Ti/SiO 2 /Si substrate. X-ray diffraction analysis and atomic force microscopy showed that dopant La and Cd causes decreased grain size of BST thin films obviously, and Sn-doped BST thin films was...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2008-12, Vol.19 (12), p.1197-1201
Main Authors: Hu, Wencheng, Yang, Chuanren, Zhang, Wanli
Format: Article
Language:English
Subjects:
Applied sciences
Atoms & subatomic particles
Barium strontium titanates
Cadmium
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics
Exact sciences and technology
Grain size
Materials
Materials Science
Optical and Electronic Materials
Sol gel process
Thin films
Tin
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Summary:Ba 1− x Sr x TiO 3 (BST) thin films doped with La, Cd and Sn were prepared by sol–gel method on the Pt/Ti/SiO 2 /Si substrate. X-ray diffraction analysis and atomic force microscopy showed that dopant La and Cd causes decreased grain size of BST thin films obviously, and Sn-doped BST thin films was similar to BST films in grain size. La and Cd doped decreased the tunability of BST thin films and Sn doped increased it, which may be explained by stress, electronegativity and oxygen vacancies factors. All the doped BST thin films improved the leakage current characteristic.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9527-7