The electronic structures for the optical absorption of Hf-O-N thin films

• Published in: Journal of electroceramics 2006-12, Vol.17 (2-4), p.197-203
• Main Authors: SUNG KWAN KIM, KIM, Yang-Soo, JEON, Young-Ah, CHOI, Jongwan, NO, Kwang-Soo
• Format: Article
• Language: English
• Subjects: Atomic structure; Ceramics; Composition effects; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Energy gaps (solid state); Exact sciences and technology; Hafnium; Mathematical analysis; Microelectronics; Physics; Thin films; Thin films and multilayers; Valence band
• ISSN: 1385-3449; 1573-8663
• DOI: 10.1007/s10832-006-0469-x

Issue Title: Special Issue: ICE-2005 International Conference on Electroceramics The local structures of Hf-O-N thin films were analyzed using an extended X-ray absorption fine structure (EXAFS) study on Hf L ^sub III^-edge and first-principles calculations. Depending on their composition and atomic configurations, Hf^sub 4^O^sub 8^ (CN: 7.0), Hf^sub 4^O^sub 5^N^sub 2^ (CN: 6.25) and Hf^sub 4^O^sub 2^N^sub 4^(CN: 5.5) were suggested as the local structures of Hf-O-N thin films. The optical band gaps of Hf-O-N thin films were compared with the calculated band gap. And to investigate the optical absorption, the effects of film compositions on the valence bands of Hf-O-N thin films were analyzed by comparing the experimental valence band with the valence band.[PUBLICATION ABSTRACT]