An analytical solution to a double-gate MOSFET with undoped body

A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltag...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2000-05, Vol.21 (5), p.245-247
Main Author: Taur, Yuan
Format: Article
Language:English
Subjects:
Bending
Boundary conditions
CMOS
Electron mobility
Exact solutions
Gates
Mathematical analysis
MOSFET circuits
MOSFETs
Poisson equation
Poisson equations
Semiconductor devices
Semiconductor films
Silicon
Threshold voltage
Tunneling
Very large scale integration
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.841310