Limitations of shift-and-ratio based L sub(eff) extraction techniques for MOS transistors with halo or pocket implants

The shift-and-ratio method has been considered as one of the most accurate and consistent techniques for extracting the effective channel-length of the MOS transistor. This method assumes the effective mobility of a long channel and a short channel transistor to be equal. Scaling down the MOS transi...

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Bibliographic Details
Published in:IEEE electron device letters 2000-01, Vol.21 (3), p.133-136
Main Authors: van Meer, Hans, Henson, Kirklen, Lyu, Jeong-Ho, Rosmeulen, Maarten, Kubicek, Stefan, Collaert, Nadine, De Meyer, Kristin
Format: Article
Language:English
Subjects:
Channels
Devices
Halos
Implants
Metal oxide semiconductors
Pocket
Semiconductor devices
Transistors
Online Access:Get full text
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Summary:The shift-and-ratio method has been considered as one of the most accurate and consistent techniques for extracting the effective channel-length of the MOS transistor. This method assumes the effective mobility of a long channel and a short channel transistor to be equal. Scaling down the MOS transistor urges the need of including halo (or pocket) implants in the fabrication process. Due to this implant, however, the short channel MOSFET features a degraded effective mobility compared to the long channel reference device. This affects the channel-length extraction and results in unrealistic high values for the extracted effective channel-length for deep submicron transistors with high-dose halo (or pocket) implants.
ISSN:0741-3106
DOI:10.1109/55.823579