Process Integration of Embedded FeRAMs

This paper describes the general aspects of embedding Ferroelectric Memories (FeRAMs) with logic circuits and/or microcontrollers. These devices and stand-alone memories constitute the main thrust of applications of ferroelectric memories. The problems associated with embedding test the robustness a...

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Bibliographic Details
Published in:Journal of electroceramics 1999-06, Vol.3 (2), p.135-142
Main Authors: de Araujo, C A, Paz, Solayappan, N, Mcmillan, L D, Otsuki, T, Arita, K
Format: Article
Language:English
Subjects:
CMOS
Endurance
Ferroelectric materials
Ferroelectricity
Integrated circuits
Lithography
Robustness
Smart cards
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Summary:This paper describes the general aspects of embedding Ferroelectric Memories (FeRAMs) with logic circuits and/or microcontrollers. These devices and stand-alone memories constitute the main thrust of applications of ferroelectric memories. The problems associated with embedding test the robustness and compatibility of the FeRAM process with established CMOS integrated circuits. As integrated circuits technology advances in lithography, FeRAMs meet the challenge, but new problems appear. In this review, existing embedded FeRAMs of the 0.8/0.6 μ generation will be discussed. A program for the 0.35/0.25 μ generation, and the 0.18 μ challenges are outlined and addressed. The paper also reviews the application of FeRAM Smart Cards. This application is becoming the best example of embedded FeRAMs in which to demonstrate the "System-One-Chip" technology direction. Smart Card ICs clearly take advantage of the low power, high-write speed and long endurance characteristics of Ferroelectric Memories.[PUBLICATION ABSTRACT]
ISSN:1385-3449
1573-8663
DOI:10.1023/A:1009991026077