Optical and structural properties of SiC nanocrystals

This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 ...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2008-09, Vol.19 (8-9), p.682-686
Main Authors: Morales Rodriguez, M., Díaz Cano, A., Torchynska, T. V., Palacios Gomez, J., Gomez Gasga, G., Polupan, G., Mynbaeva, M.
Format: Article
Language:English
Subjects:
Bands
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics
Etching
Excitation
Inclusions
Materials Science
Nanocrystals
Optical and Electronic Materials
Quantum confinement
Silicon carbide
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Summary:This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Intensity enhancement for exciton-related PL bands (2.84, 3.04 and 3.24 eV ) is attributed to the exciton recombination rate increasing as result of electron-hole confinement realization in big size SiC NCs (6H-PSiC with inclusions of 15R- and 4H-PSiC) and/or quantum confinement exciton recombination in small-size 4H-PSiC NCs.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9379-1