Displacement damage correlation of proton and silicon ion radiation in GaAs

We present results of displacement damage correlation between 2 MeV protons and 22 MeV silicon ion irradiation damage in p/sup +/n GaAs solar cells. The radiation induced degradation of the photovoltaic response correlates well in terms of displacement damage dose.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2005-12, Vol.52 (6), p.2678-2682
Main Authors: Warner, J.H., Messenger, S.R., Walters, R.J., Summers, G.P.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Atomic measurements
Correlation
Damage
Damage correlation
Degradation
Displacement
displacement damage
Electrons
Energy loss
GaAs solar cells
Gallium arsenide
Gallium arsenides
ion irradiation
Laboratories
nonionizing energy loss (NIEL)
Photovoltaic cells
proton irradiation
Protons
radiation damage
Silicon
Solar cells
SRIM
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Description
Summary:We present results of displacement damage correlation between 2 MeV protons and 22 MeV silicon ion irradiation damage in p/sup +/n GaAs solar cells. The radiation induced degradation of the photovoltaic response correlates well in terms of displacement damage dose.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2005.860737