Optical characterisation of a-Si:H and nc-Si: H thin films using the transmission spectrum alone

• Published in: Journal of materials science. Materials in electronics 2007-10, Vol.18 (S1), p.225-229
• Main Authors: HALINDINTWALI, S, KNOESEN, D, MULLER, T. F. G, ADAMS, D, TILE, N, THERON, C. C, SCHROPP, R. E. I
• Format: Article
• Language: English
• Subjects: Applied sciences; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Deposition; Electronics; Energy gap; Exact sciences and technology; Materials; Materials science; Mathematical analysis; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Profilometers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin films; Wire
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9194-8

Using the method proposed by Swanepoel (J Phys E: Sci Instrum 17:896-903, 1984), a-Si:H and nc-Si:H thin films have been successfully characterised using the transmission spectrum alone as taken in the UV-visible range. The studied samples were deposited on both Corning glass and Polyethylene napthalate (PEN) substrates using the Hot Wire Chemical Vapour deposition technique (HWCVD). Results on refractive index, absorption coefficient and energy gap will be presented. Thicknesses calculated by the same method will be compared to those obtained by direct measurement using a Dektak profilometer.