Phase change memory materials-composition, structure, and properties

The phase change memory materials (PCMM), their composition, structure, properties and crystallization are discussed. Formation of intermediary phases with high density of substitutional defects during high-speed crystallization of their amorphous forms is suggested.

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2007-10, Vol.18 (S1), p.169-174
Main Authors: FRUMAR, M, FRUMAROVA, B, WAGNER, T, HRDLICKA, M
Format: Article
Language:English
Subjects:
Applied sciences
Crystal defects
Crystallization
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
High density
High speed
Integrated circuits
Integrated circuits by function (including memories and processors)
Materials
Materials science
Phase change
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:The phase change memory materials (PCMM), their composition, structure, properties and crystallization are discussed. Formation of intermediary phases with high density of substitutional defects during high-speed crystallization of their amorphous forms is suggested.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9187-7