Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes

The effect of proton irradiation of InGaAs/GaAs quantum-well (QW) light-emitting diodes (LEDs) has been studied at energies ranging from 1 to 500 MeV in order to determine device damage mechanisms. The data are analyzed in terms of the theory of Rose and Barnes (1982), and complete correlation of th...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.1773-1777
Main Authors: Walters, R.J., Messenger, S.R., Summers, G.P., Burke, E.A., Khanna, S.M., Estan, D., Erhardt, L.S., Hui Chun Liu, Mae Gao, Buchanan, M., SpringThorpe, A.J., Houdayer, A., Carlone, C.
Format: Article
Language:English
Subjects:
Damage
Data analysis
Degradation
Energy (nuclear)
Energy loss
Gallium arsenide
Indium gallium arsenide
Indium gallium arsenides
Light emitting diodes
Optoelectronic devices
Proton energy
Proton irradiation
Protons
Quantum well devices
Quantum wells
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Summary:The effect of proton irradiation of InGaAs/GaAs quantum-well (QW) light-emitting diodes (LEDs) has been studied at energies ranging from 1 to 500 MeV in order to determine device damage mechanisms. The data are analyzed in terms of the theory of Rose and Barnes (1982), and complete correlation of the data over the entire proton energy range was achieved. This degradation data, along with data from other GaAs-based optoelectronic devices, are discussed in terms of the nonionizing energy loss (NIEL). The energy dependences of the various damage coefficients for proton energies greater than about 10 MeV are bounded by the total NIEL and the elastic NIEL.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983129