IZO/Al/GZO multilayer films to replace ITO films

• Published in: Journal of materials science. Materials in electronics 2008-10, Vol.19 (10), p.981-985
• Main Authors: Lee, Chongmu, Dwivedi, R. P., Lee, Wangwoo, Hong, Chanseok, Lee, Wan In, Kim, Hyoun Woo
• Format: Article
• Language: English
• Subjects: Aluminum; Characterization and Evaluation of Materials; Chemistry and Materials Science; Electrical conductivity; Electrical resistivity; Indium tin oxide; Interlayers; Materials Science; Multilayers; Optical and Electronic Materials; Resistivity; Transmittance
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9430-2

Multilayer transparent conducting oxide (TCO) film structures have been designed and fabricated to achieve both high conductivity and high transmittance. In this article we report a buffering method and introduction of an aluminum (Al) interlayer to enhance the electrical conductivity of the IZO/Al/GZO/ZnO multilayer film on glass. Hall measurement results show that this multilayer film has a remarkable increase in mobility compared to those without using an Al interlayer. The surface morphology shows a decrease in surface roughness as the Al layer thickness increases. We have shown that the use of a thin Al interlayer enhances the electrical conductivity without sacrificing its optical transmittance much. By optimizing the thickness of the Al layer, the lowest resistivity of 2.2 × 10 −4  Ω cm and an average transmittance higher than 75% in a range from 400 to 800 nm have been achieved. These properties are acceptable for future TCO applications.