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Effect of Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM
Blocking temperature written magnetic random access memory element test structures of various sizes and tunnel barrier resistance area products were fabricated in order to study the dependence of writing efficiency and tunnel junction integrity on the thermal environment of the memory element and tu...
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Published in: | IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2721-2723 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Blocking temperature written magnetic random access memory element test structures of various sizes and tunnel barrier resistance area products were fabricated in order to study the dependence of writing efficiency and tunnel junction integrity on the thermal environment of the memory element and tunnel junction resistance area product. The test structures were programmed using a CPP writing mode, where the device is heated by passing a small current through the tunnel junction. The device is then field cooled to set the direction of an IrMn/NiFeCo storage layer. Quasistatic write current was measured as a function of resistance area product and for underlayers with differing thermal conductivities. Linear fits to the size dependent write current data suggest that properly designed submicron bits can be written quasistatically at |
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ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/TMAG.2006.879726 |