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Effect of Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM

Blocking temperature written magnetic random access memory element test structures of various sizes and tunnel barrier resistance area products were fabricated in order to study the dependence of writing efficiency and tunnel junction integrity on the thermal environment of the memory element and tu...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2721-2723
Main Authors: Deak, J.G., Daughton, J.M., Pohm, A.V.
Format: Article
Language:English
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Summary:Blocking temperature written magnetic random access memory element test structures of various sizes and tunnel barrier resistance area products were fabricated in order to study the dependence of writing efficiency and tunnel junction integrity on the thermal environment of the memory element and tunnel junction resistance area product. The test structures were programmed using a CPP writing mode, where the device is heated by passing a small current through the tunnel junction. The device is then field cooled to set the direction of an IrMn/NiFeCo storage layer. Quasistatic write current was measured as a function of resistance area product and for underlayers with differing thermal conductivities. Linear fits to the size dependent write current data suggest that properly designed submicron bits can be written quasistatically at
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2006.879726