Investigation of deep levels in InGaAs channels comprising thin layers of InAs

The generation-recombination noise in doped-channel In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As/InP micro-Hall devices is characterized using deep level noise spectroscopy. Three noise sources are detected with trap energies of 140, 170 and 40 meV respectively. The levels are likely to be associated with...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2008-09, Vol.19 (8-9), p.797-800
Main Authors: Dobbert, J., Kunets, Vas. P., Morgan, T. Al, Guzun, D., Mazur, Yu. I., Masselink, W. T., Salamo, G. J.
Format: Article
Language:English
Subjects:
Channels
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Devices
Electron states
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
Iii-v semiconductors
Impurity and defect levels
Impurity and defect levels
energy states of adsorbed species
Indium arsenides
Indium gallium arsenides
Materials Science
Noise
Optical and Electronic Materials
Physics
Surface and interface electron states
Thin films
Vacancies
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Summary:The generation-recombination noise in doped-channel In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As/InP micro-Hall devices is characterized using deep level noise spectroscopy. Three noise sources are detected with trap energies of 140, 170 and 40 meV respectively. The levels are likely to be associated with arsenic vacancies.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9451-x