Strained germanium thin film membrane on silicon substrate for optoelectronics

This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light...

Full description

Saved in:
Bibliographic Details
Published in:Optics express 2011-12, Vol.19 (27), p.25866-25872
Main Authors: Nam, Donguk, Sukhdeo, Devanand, Roy, Arunanshu, Balram, Krishna, Cheng, Szu-Lin, Huang, Kevin Chih-Yao, Yuan, Ze, Brongersma, Mark, Nishi, Yoshio, Miller, David, Saraswat, Krishna
Format: Article
Language:English
Subjects:
Electronics - instrumentation
Equipment Design
Germanium - chemistry
Germanium - radiation effects
Light
Membranes, Artificial
Optical Devices
Photometry - methods
Semiconductors
Silicon - chemistry
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.19.025866