High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

Ambipolar OFETs with balanced hole and electron field‐effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single‐solution‐processed conjugated polymer, DPPT‐TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high‐performance OF...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2012-02, Vol.24 (5), p.647-652
Main Authors: Chen, Zhuoying, Lee, Mi Jung, Shahid Ashraf, Raja, Gu, Yun, Albert-Seifried, Sebastian, Meedom Nielsen, Martin, Schroeder, Bob, Anthopoulos, Thomas D., Heeney, Martin, McCulloch, Iain, Sirringhaus, Henning
Format: Article
Language:English
Subjects:
ambipolar devices
ambipolar transport
Balancing
Charge injection
Copolymers
Devices
Electron mobility
Electrons
Equipment Design
Field effect transistors
Integrated circuits
Optimization
polymers
Polymers - chemistry
solution processing
Thiophenes - chemistry
Transistors, Electronic
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Summary:Ambipolar OFETs with balanced hole and electron field‐effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single‐solution‐processed conjugated polymer, DPPT‐TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high‐performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201102786