Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor

In this study, we investigated the electrical characteristics and the stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) from the viewpoint of active layer composition. Active layers of TFTs were deposited by r.f. sputtering. Two kinds of sputtering targets, which...

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Bibliographic Details
Published in:Thin solid films 2011-08, Vol.519 (20), p.6868-6871
Main Authors: Huh, Jun-Young, Jeon, Jae-Hong, Choe, Hee-Hwan, Lee, Kang-Woong, Seo, Jong-Huyn, Ryu, Min-Ki, Park, Sang-Hee Ko, Hwang, Chi-Sun, Cheong, Woo-Seok
Format: Article
Language:English
Subjects:
Applied sciences
Compositional ratio
Cross-disciplinary physics: materials science
rheology
Deposition
Deposition by sputtering
Electronics
Exact sciences and technology
Gallium
IGZO
Indium
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
r.f. sputtering
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sputtering
Stability
Thin film transistors
Tradeoffs
Transistors
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Summary:In this study, we investigated the electrical characteristics and the stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) from the viewpoint of active layer composition. Active layers of TFTs were deposited by r.f. sputtering. Two kinds of sputtering targets, which have different compositional ratios of In:Ga:Zn, were used to make variations in the active layer composition. All the fabricated IGZO TFTs showed more excellent characteristics than conventional amorphous silicon TFTs. However, in accordance with the Ga content, IGZO TFTs showed somewhat different electrical characteristics in values such as the threshold voltage and the field effect mobility. The device stability was also dependent on the Ga content, but had trade-off relation with the electrical characteristics.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.01.400