Enhancement of electron field emission by carbon coating on vertically aligned Si nanowires

► Vertically aligned Si nanowires were synthesized by chemical method. ► Amorphous carbon thin film was coated by DC PECVD. ► Electron field emission performance significantly improved due to amorphous carbon coating. Electron field emission properties of vertically aligned Si nanowires, synthesized...

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Bibliographic Details
Published in:Applied surface science 2011-09, Vol.257 (22), p.9649-9653
Main Authors: Das, N.S., Banerjee, D., Chattopadhyay, K.K.
Format: Article
Language:English
Subjects:
Alignment
Amorphous carbon coating
Carbon
Coating
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Etching
Exact sciences and technology
FESEM
Field emission
Nanowires
Physics
Scanning electron microscopy
Silicon
Silicon nanowire
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Summary:► Vertically aligned Si nanowires were synthesized by chemical method. ► Amorphous carbon thin film was coated by DC PECVD. ► Electron field emission performance significantly improved due to amorphous carbon coating. Electron field emission properties of vertically aligned Si nanowires, synthesized by chemically etching p-type Si wafers with different etching times were investigated in detail. Fabrication of Si nanowires was confirmed by field emission scanning electron microscopic investigation. It was observed that a thin layer of amorphous carbon coating over the grown Si nanowires enhanced the field emission properties significantly.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2011.06.091