A high-gain monolithic D-band InP HEMT amplifier

This paper describes a three-stage monolithic amplifier that exhibits a small-signal gain of 30 dB at 140 GHz. The amplifier employs AlInAs/GaInAs/InP high electron mobility transistor devices with 0.1/spl times/150 /spl mu/m/sup 2/ gate periphery, is implemented with coplanar waveguide circuitry fa...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1999-09, Vol.34 (9), p.1219-1224
Main Authors: Pobanz, C.W., Matloubian, M., Lui, M., Sun, H.-C., Case, M., Ngo, C.M., Janke, P., Gaier, T., Samoska, L.
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
Coplanar waveguides
Gain
HEMTs
High electron mobility transistors
Indium phosphide
Indium phosphides
Laboratories
Millimeter wave radar
Millimeter wave technology
MMICs
Noise levels
Radio frequency
Semiconductor devices
Sun
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Summary:This paper describes a three-stage monolithic amplifier that exhibits a small-signal gain of 30 dB at 140 GHz. The amplifier employs AlInAs/GaInAs/InP high electron mobility transistor devices with 0.1/spl times/150 /spl mu/m/sup 2/ gate periphery, is implemented with coplanar waveguide circuitry fabricated on an InP substrate, and occupies a total area of 2 mm/sup 2/. Gain exceeding 10 dB was measured on-wafer from 129 to 157 GHz. This is the highest reported gain per stage for a transistor amplifier operating at these frequencies.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.782079