Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBTs

An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBTs) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe laye...

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Bibliographic Details
Published in:IEEE electron device letters 1999-03, Vol.20 (3), p.116-118
Main Authors: Anteney, I.M., Lippert, G., Ashburn, P., Osten, H.J., Heinemann, B., Parker, G.J., Knoll, D.
Format: Article
Language:English
Subjects:
Barriers
Boron
Carbon
Collectors
Conduction band
Current measurement
Density measurement
Electrical resistance measurement
Energy barrier
Enhanced diffusion
Germanium silicon alloys
Heterojunction bipolar transistors
Implants
Photonic band gap
Silicon germanides
Silicon germanium
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Summary:An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBTs) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (/spl ap/10/sup 20/ cm/sup -3/) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.748906